ST M29F002BT, M29F002BNT, M29F002BB, M29F002BNB 数据手册

M29F002BT, M29F002BNT M29F002BB, M29F002BNB 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory I SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS I ACCESS TIME: 45 ns I PROGRAMMING TIME – 8 µs by Byte typical I 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks I PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits I ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend I UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming I TEMPORARY BLOCK UNPROTECTION MODE I LOW POWER CONSUMPTION – Standby and Automatic Standby I 100,000 PROGRAM/ERASE CYCLES per BLOCK I 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year I ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29F002BT: B0h – Top Device Code M29F002BNT: B0h – Bottom Device Code M29F002BB: 34h – Bottom Device Code M29F002BNB: 34h

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厂商: ST

文件类型: PDF

文件大小: 185 KB

文件校验: 4FAE8985FCD1008788D3017710ED82EF

上传时间: 2012-06-05 15:46:00

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PDF链接: ST M29F002BT, M29F002BNT, M29F002BB, M29F002BNB 数据手册 PDF