MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W,-45XL-W,-55XL-W,-70XL-W

M5M5256DP,KP,FP,VP,RV是262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

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厂商: 三菱

文件类型: PDF

文件大小: 47 KB

文件校验: 9E0713EED5F06A1A585BF4893BD7CE1B

上传时间: 2012-06-06 14:38:00

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PDF链接: MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W,-45XL-W,-55XL-W,-70XL-W PDF