IXYS IXTQ 69N30P, IXTT 69N30P 数据手册
IXTQ 69N30P is a N-Channel Enhancement Mode Power MOSFET with VDSS = 300 V, ID25 = 69 A and RDS(on) = 49 mΩ. It features international standard packages, unclamped inductive switching (UIS) rating and low package inductance.
厂商: IXYS
文件类型: PDF
文件大小: 105 KB
文件校验: B432CDE7CFA8221DD93649727F0B0AD9
上传时间: 2012-06-07 00:50:00
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PDF链接: IXYS IXTQ 69N30P, IXTT 69N30P 数据手册 PDF